The GENESIC SEMI part G3R350MT12D is a highly efficient N-Channel SiC MOSFET designed for various power electronic applications. With a maximum voltage rating of 1200V and a low on-resistance (Rds) of 350ohms, this MOSFET is capable of handling high voltage and delivering excellent conductivity, resulting in reduced power losses and improved system efficiency. The TO-247-3 package ensures easy installation and enhanced thermal performance, enabling reliable operation under demanding conditions. Incorporating advanced technology and robust construction, the G3R350MT12D is an ideal choice for high-power applications requiring superior performance and reliability.